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PDF DMG4406LSS Data sheet ( Hoja de datos )
| Número de pieza | DMG4406LSS | |
| Descripción | N-CHANNEL ENHANCEMENT MODE MOSFET | |
| Fabricantes | Diodes | |
| Logotipo |  |
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DMG4406LSS
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
30V
RDS(ON) max
11mΩ @ VGS = 10V
15mΩ @ VGS = 4.5V
ID max
TA = 25°C
10.3A
9.3A
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
• Backlighting
• Power Management Functions
• DC-DC Converters
Features and Benefits
• 100% Unclamped Inductive Switch (UIS) test in production
• Low On-Resistance
• Low Input Capacitance
• Fast Switching Speed
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device, Halogan and Antimony Free (Note 2)
• Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
• Case: SO-8
• Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections Indicator: See diagram
• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Weight: 0.008 grams (approximate)
SO-8
Top View
SD
SD
SD
GD
Top View
Internal Schematic
Ordering Information (Note 3)
Notes:
Part Number
DMG4406LSS-13
Case
SO-8
Packaging
2500/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free.
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
DMG4406LSS
Document number: DS35539 Rev. 7 - 2
Top View
8
5
G4406LS
YY WW
14
Logo
Part no.
Xth week: 01 ~ 53
Year: “11” = 2011
1 of 6
www.diodes.com
February 2012
© Diodes Incorporated
1 page  
DMG4406LSS
1
D = 0.7
D = 0.5
D = 0.3
0.1 D = 0.1
D = 0.05
D = 0.02
0.01 D = 0.01
D = 0.005
Single Pulse
0.001
0.00001 0.0001
D = 0.9
RθJA(t) = r(t) * RθJA
RθJA = 60°C/W
Duty Cycle, D = t1/ t2
0.001
0.01
0.1
1
t1, PULSE DURATION TIMES (sec)
Fig. 13 Transient Thermal Resistance
10
100 1,000
Package Outline Dimensions
e
D
b
E1 E
A1
L
Detail ‘A’
Gauge Plane
Seating Plane
A2 A A3
h
45°
7°~9°
Detail ‘A’
SO-8
Dim Min Max
A - 1.75
A1 0.10 0.20
A2 1.30 1.50
A3 0.15 0.25
b 0.3 0.5
D 4.85 4.95
E 5.90 6.10
E1 3.85 3.95
e 1.27 Typ
h - 0.35
L 0.62 0.82
θ 0° 8°
All Dimensions in mm
Suggested Pad Layout
X
C2
Y
DMG4406LSS
Document number: DS35539 Rev. 7 - 2
Dimensions Value (in mm)
X 0.60
C1 Y 1.55
C1 5.4
C2 1.27
5 of 6
www.diodes.com
February 2012
© Diodes Incorporated
5 Page | ||
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| PDF Descargar | [ Datasheet DMG4406LSS.PDF ] | |
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