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FZT690B fiches techniques PDF

Kexin - NPN Silicon Planar Medium Power High Gain Transistor

Numéro de référence FZT690B
Description NPN Silicon Planar Medium Power High Gain Transistor
Fabricant Kexin 
Logo Kexin 





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FZT690B fiche technique
SMD Type
Transistors
NPN Silicon Planar Medium Power
High Gain Transistor
FZT690B
Features
Very low equivalent on-resistance; RCE(sat) 125mÙ at 2A.
Gain of 400 at IC=1 Amp.
Very low saturation voltage.
SOT-223
6.50+0.2
-0.2
3.00+0.1
-0.1
4
Unit: mm
3.50+0.2
-0.2
0.90+0.2
-0.2
7.00+0.3
-0.3
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Peak pulse current
Continuous collector current
Power dissipation
Operating and storage temperature range
123
2.9
4.6
0.70+0.1
-0.1
1 base
2 collector
3 emitter
Symbol
VCBO
VCEO
VEBO
IC
ICM
Ptot
Tj,Tstg
Rating
45
45
5
3
6
2
-55 to +150
Unit
V
V
V
A
A
W
www.kexin.com.cn 1

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