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1N4446 fiches techniques PDF

Fairchild Semiconductor - Small Signal Diode

Numéro de référence 1N4446
Description Small Signal Diode
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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1N4446 fiche technique
1N4446
Small Signal Diode
DO-35
Color Band Denotes Cathode
Absolute Maximum Ratings* T = 25°C unless otherwise noted
A
Symbol
Parameter
Value
VRRM
Maximum Repetitive Reverse Voltage
100
IF(AV)
Average Rectified Forward Current
200
IFSM Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
1.0
4.0
Tstg Storage Temperature Range
TJ Operating Junction Temperature
-65 to +200
175
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD
RθJA
Parameter
Power Dissipation
Thermal Resistance, Junction to Ambient
Value
500
300
Units
V
mA
A
A
°C
°C
Units
mW
°C/W
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
VR Breakdown Voltage
VF Forward Voltage
IR Reverse Current
CT Total Capacitance
trr Reverse Recovery Time
IR = 100 µA
IF = 20 mA
VR = 20 V
VR = 20 V, TA = 150°C
VR = 0, f = 1.0 MHz
IF = 10 mA, VR = 6 V,
RL = 100 , Irr = 1.0 mA
Min
100
Max
1.0
25
50
4
4
Units
V
V
nA
µA
pF
ns
2003 Fairchild Semiconductor Corporation
1N4446, Rev. A

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