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Numéro de référence | SDD10N04 | ||
Description | Discrete Diodes | ||
Fabricant | Sirectifier | ||
Logo | |||
3
2
1
1
SDD10N01
SDD10N02
SDD10N03
SDD10N04
SDD10N05
SDD10N06
SDD10N07
VRSM
V
50
100
200
400
600
800
1000
SDD10
Discrete Diodes
Dimensions TO-220AB
23
VRRM
V
50
100
200
400
600
800
1000
Dim.
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
Inches
Min. Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100 BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
Milimeter
Min. Max.
12.70 13.97
14.73 16.00
9.91 10.66
3.54 4.08
5.85 6.85
2.54 3.18
1.15 1.65
2.79 5.84
0.64 1.01
2.54 BSC
4.32 4.82
1.14 1.39
0.35 0.56
2.29 2.79
Symbol
Test Conditions
IF(AV)M
IFSM
TC=100oC; 180o sine
TVJ=45oC;
TVJ=150oC;
TVJ=45oC;
I2t TVJ=150oC;
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
TVJ
TVJM
Tstg
Md Mounting torque
Weight
Symbol
Test Conditions
IR
VF
VTO
rT
RthJC
TVJ=TVJM; VR=VRRM
IF=45A; TVJ=25oC
For power-loss calculations only
TVJ=TVJM
DC current
Maximum Ratings
10
100
110
90
100
50
50
41
42
-40...+180
180
-40...+150
0.4...0.6
4
Characteristic Values
<_ 0.5
<_ 1.15
0.8
40
3.5
Unit
A
A
A2s
oC
Nm
g
Unit
mA
V
V
m
K/W
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Pages | Pages 1 | ||
Télécharger | [ SDD10N04 ] |
No | Description détaillée | Fabricant |
SDD10N01 | 10 Ampere Heatsink Dual Tandem Polarity General Purpose Rectifier Diodes | Thinki Semiconductor |
SDD10N01 | Discrete Diodes | Sirectifier |
SDD10N02 | 10 Ampere Heatsink Dual Tandem Polarity General Purpose Rectifier Diodes | Thinki Semiconductor |
SDD10N02 | Discrete Diodes | Sirectifier |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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