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NCE Power Semiconductor - N-Channel Super Trench Power MOSFET

Numéro de référence NCEP15T11T
Description N-Channel Super Trench Power MOSFET
Fabricant NCE Power Semiconductor 
Logo NCE Power Semiconductor 





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NCEP15T11T fiche technique
http://www.ncepower.com
Pb Free Product
NCEP15T11T
NCE N-Channel Super Trench Power MOSFET
Description
The NCEP15T11T uses Super Trench technology that is
uniquely optimized to provide the most efficient high frequency
switching performance. Both conduction and switching power
losses are minimized due to an extremely low combination of
RDS(ON) and Qg. This device is ideal for high-frequency
switching and synchronous rectification.
General Features
VDS =150V,ID =110A
RDS(ON) <7.8m@ VGS=10V
Excellent gate charge x RDS(on) product(FOM)
Very low on-resistance RDS(on)
175 °C operating temperature
Pb-free lead plating
100% UIS tested
Application
DC/DC Converter
Ideal for high-frequency switching and synchronous
rectification
Schematic diagram
TO-247 top view
100% UIS TESTED!
100% Vds TESTED!
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCEP15T11T
NCEP15T11T
TO-247
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
ID (100)
Pulsed Drain Current
Maximum Power Dissipation
IDM
PD
Derating factor
Single pulse avalanche energy (Note 5)
EAS
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
150
±20
110
93
440
300
2
1296
-55 To 175
Unit
V
V
A
A
A
W
W/
mJ
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
0.5 /W
Wuxi NCE Power Semiconductor Co., Ltd
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