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NCEP01T13 Datasheet دیتاشیت PDF دانلود

دیتاشیت - NCE Power Semiconductor - N-Channel Super Trench Power MOSFET

شماره قطعه NCEP01T13
شرح مفصل N-Channel Super Trench Power MOSFET
تولید کننده NCE Power Semiconductor 
آرم NCE Power Semiconductor 


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NCEP01T13 شرح
http://www.ncepower.com
Pb Free Product
NCEP01T13
NCE N-Channel Super Trench Power MOSFET
Description
The NCEP01T13 uses Super Trench technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and
switching power losses are minimized due to an extremely
low combination of RDS(ON) and Qg. This device is ideal for
high-frequency switching and synchronous rectification.
General Features
VDS =100V,ID =135A
RDS(ON) <4.5m@ VGS=10V
Excellent gate charge x RDS(on) product
Very low on-resistance RDS(on)
175 °C operating temperature
Pb-free lead plating
100% UIS tested
Schematic diagram
Marking and pin assignment
Application
DC/DC Converter
Ideal for high-frequency switching and synchronous
rectification
100% UIS TESTED!
100% Vds TESTED!
TO-220-3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
NCEP01T13
NCEP01T13
TO-220-3L
-
-
Absolute Maximum Ratings (TC=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Limit
100
±20
Drain Current-Continuous (Silicon Limited)
ID 150
Drain Current-Continuous (Package Limited)
ID 135
Drain Current-Continuous(TC=100)
Pulsed Drain Current
Maximum Power Dissipation
Derating factor
Single pulse avalanche energy (Note 5)
Operating Junction and Storage Temperature Range
ID (100)
IDM
PD
EAS
TJ,TSTG
108
500
220
1.5
1156
-55 To 175
Quantity
-
Unit
V
V
A
A
A
A
W
W/
mJ
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v2.0

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