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PDF NCEP01T13 Data sheet ( Hoja de datos )
| Número de pieza | NCEP01T13 | |
| Descripción | N-Channel Super Trench Power MOSFET | |
| Fabricantes | NCE Power Semiconductor | |
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http://www.ncepower.com
Pb Free Product
NCEP01T13
NCE N-Channel Super Trench Power MOSFET
Description
The NCEP01T13 uses Super Trench technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and
switching power losses are minimized due to an extremely
low combination of RDS(ON) and Qg. This device is ideal for
high-frequency switching and synchronous rectification.
General Features
● VDS =100V,ID =135A
RDS(ON) <4.5mΩ @ VGS=10V
● Excellent gate charge x RDS(on) product
● Very low on-resistance RDS(on)
● 175 °C operating temperature
● Pb-free lead plating
● 100% UIS tested
Schematic diagram
Marking and pin assignment
Application
● DC/DC Converter
● Ideal for high-frequency switching and synchronous
rectification
100% UIS TESTED!
100% ∆Vds TESTED!
TO-220-3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
NCEP01T13
NCEP01T13
TO-220-3L
-
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Limit
100
±20
Drain Current-Continuous (Silicon Limited)
ID 150
Drain Current-Continuous (Package Limited)
ID 135
Drain Current-Continuous(TC=100℃)
Pulsed Drain Current
Maximum Power Dissipation
Derating factor
Single pulse avalanche energy (Note 5)
Operating Junction and Storage Temperature Range
ID (100℃)
IDM
PD
EAS
TJ,TSTG
108
500
220
1.5
1156
-55 To 175
Quantity
-
Unit
V
V
A
A
A
A
W
W/℃
mJ
℃
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v2.0
1 page  
http://www.ncepower.com
Pb Free Product
NCEP01T13
Vds Drain-Source Voltage (V)
Figure 7 Capacitance vs Vds
TJ-Junction Temperature(℃)
Figure 9 BVDSS vs Junction Temperature
Vds Drain-Source Voltage (V)
Figure 8 Safe Operation Area
TJ-Junction Temperature(℃)
Figure 10 Current De-rating
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
Wuxi NCE Power Semiconductor Co., Ltd
Page 5
v2.0
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet NCEP01T13.PDF ] | |
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