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PDF NCE60R180F Data sheet ( Hoja de datos )
| Número de pieza | NCE60R180F | |
| Descripción | N-Channel Super Junction Power MOSFET �� | |
| Fabricantes | NCE Power Semiconductor | |
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NCE60R180,NCE60R180F
N-Channel Super Junction Power MOSFET II
General Description
The series of devices use advanced super junction
technology and design to provide excellent RDS(ON) with low
gate charge. This super junction MOSFET fits the industry’s
AC-DC SMPS requirements for PFC, AC/DC power
conversion, and industrial power applications.
Features
●New technology for high voltage device
●Low on-resistance and low conduction losses
●Small package
●Ultra Low Gate Charge cause lower driving requirements
●100% Avalanche Tested
●ROHS compliant
TVDS@ jmax
RDS(ON) MAX
ID
650
180
21
V
mΩ
A
Application
● Power factor correction（PFC）
● Switched mode power supplies(SMPS)
● Uninterruptible Power Supply（UPS）
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
Marking
NCE60R180
TO-220
NCE60R180
NCE60R180F
TO-220F
NCE60R180F
Table 1. Absolute Maximum Ratings (TC=25℃)
Parameter
Symbol
Drain-Source Voltage (VGS=0V）
VDS
Gate-Source Voltage (VDS=0V)
VGS
Continuous Drain Current at Tc=25°C
ID (DC)
Continuous Drain Current at Tc=100°C
Pulsed drain current (Note 1)
ID (DC)
IDM (pluse)
Maximum Power Dissipation(Tc=25℃)
PD
Derate above 25°C
Single pulse avalanche energy (Note 2)
EAS
Avalanche current(Note 1)
IAR
Repetitive Avalanche energy ，tAR limited by Tjmax
(Note 1)
EAR
TO-220 TO-220F
NCE60R180 NCE60R180F
600
±30
21 21*
13.2 13.2*
63 63*
200 34
1.6 0.27
690
7
1
Unit
V
V
A
A
A
W
W/°C
mJ
A
mJ
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
http://www.ncepower.com
v1.0
1 page  
Figure13. Transient Thermal Impedance for TO-220F
NCE60R180,NCE60R180F
Wuxi NCE Power Semiconductor Co., Ltd
Page 5
http://www.ncepower.com
v1.0
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet NCE60R180F.PDF ] | |
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