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NCE Power Semiconductor - N-Channel Super Junction Power MOSFET ��

Numéro de référence NCE60R180
Description N-Channel Super Junction Power MOSFET ��
Fabricant NCE Power Semiconductor 
Logo NCE Power Semiconductor 





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NCE60R180 fiche technique
NCE60R180,NCE60R180F
N-Channel Super Junction Power MOSFET II
General Description
The series of devices use advanced super junction
technology and design to provide excellent RDS(ON) with low
gate charge. This super junction MOSFET fits the industry’s
AC-DC SMPS requirements for PFC, AC/DC power
conversion, and industrial power applications.
Features
New technology for high voltage device
Low on-resistance and low conduction losses
Small package
Ultra Low Gate Charge cause lower driving requirements
100% Avalanche Tested
ROHS compliant
TVDS@ jmax
RDS(ON) MAX
ID
650
180
21
V
m
A
Application
Power factor correctionPFC
Switched mode power supplies(SMPS)
Uninterruptible Power SupplyUPS
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
Marking
NCE60R180
TO-220
NCE60R180
NCE60R180F
TO-220F
NCE60R180F
Table 1. Absolute Maximum Ratings (TC=25)
Parameter
Symbol
Drain-Source Voltage (VGS=0V
VDS
Gate-Source Voltage (VDS=0V)
VGS
Continuous Drain Current at Tc=25°C
ID (DC)
Continuous Drain Current at Tc=100°C
Pulsed drain current (Note 1)
ID (DC)
IDM (pluse)
Maximum Power Dissipation(Tc=25)
PD
Derate above 25°C
Single pulse avalanche energy (Note 2)
EAS
Avalanche current(Note 1)
IAR
Repetitive Avalanche energy tAR limited by Tjmax
(Note 1)
EAR
TO-220 TO-220F
NCE60R180 NCE60R180F
600
±30
21 21*
13.2 13.2*
63 63*
200 34
1.6 0.27
690
7
1
Unit
V
V
A
A
A
W
W/°C
mJ
A
mJ
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
http://www.ncepower.com
v1.0

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