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NCE Power Semiconductor - N-Channel Super Junction Power MOSFET ��

Numéro de référence NCE60R180T
Description N-Channel Super Junction Power MOSFET ��
Fabricant NCE Power Semiconductor 
Logo NCE Power Semiconductor 





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NCE60R180T fiche technique
NCE60R180T
N-Channel Super Junction Power MOSFET
General Description
The series of devices use advanced super junction
technology and design to provide excellent RDS(ON) with low
gate charge. This super junction MOSFET fits the industry’s
AC-DC SMPS requirements for PFC, AC/DC power
conversion, and industrial power applications.
Features
New technology for high voltage device
Low on-resistance and low conduction losses
Small package
Ultra Low Gate Charge cause lower driving requirements
100% Avalanche Tested
ROHS compliant
TVDS@ jmax
RDS(ON) MAX
ID
650
180
21
V
m
A
Application
Power factor correctionPFC
Switched mode power supplies(SMPS)
Uninterruptible Power SupplyUPS
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
Marking
NCE60R180T
TO-247
NCE60R180T
Table 1. Absolute Maximum Ratings (TC=25)
Parameter
Drain-Source Voltage (VGS=0V
Gate-Source Voltage (VDS=0V)
Continuous Drain Current at Tc=25°C
Continuous Drain Current at Tc=100°C
Pulsed drain current (Note 1)
Maximum Power Dissipation(Tc=25)
Derate above 25°C
Single pulse avalanche energy (Note 2)
Avalanche current(Note 1)
Repetitive Avalanche energy tAR limited by Tjmax
(Note 1)
Symbol
VDS
VGS
ID (DC)
ID (DC)
IDM (pluse)
PD
EAS
IAR
EAR
NCE60R180T
600
±30
21
13.2
63
200
1.6
690
7
1
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
http://www.ncepower.com
Unit
V
V
A
A
A
W
W/°C
mJ
A
mJ
v1.0

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