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PDF NCE60R360 Data sheet ( Hoja de datos )

Número de pieza NCE60R360
Descripción N-Channel Super Junction Power MOSFET
Fabricantes NCE Power Semiconductor 
Logotipo NCE Power Semiconductor Logotipo



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No Preview Available ! NCE60R360 Hoja de datos, Descripción, Manual

NCE60R360D,NCE60R360,NCE60R360F
N-Channel Super Junction Power MOSFET
General Description
The series of devices use advanced super junction
technology and design to provide excellent RDS(ON) with low
gate charge. This super junction MOSFET fits the industry’s
AC-DC SMPS requirements for PFC, AC/DC power
conversion, and industrial power applications.
Features
New technology for high voltage device
Low on-resistance and low conduction losses
small package
Ultra Low Gate Charge cause lower driving requirements
100% Avalanche Tested
ROHS compliant
TVDS@ jmax
RDS(ON)MAX
ID
650
360
11
V
m
A
Application
Power factor correctionPFC
Switched mode power supplies(SMPS)
Uninterruptible Power SupplyUPS
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
Marking
NCE60R360D
TO-263
NCE60R360D
NCE60R360
TO-220
NCE60R360
NCE60R360F
TO-220F
NCE60R360F
TO-263
TO-220
TO-220F
Table 1. Absolute Maximum Ratings (TC=25)
Parameter
Symbol
Drain-Source Voltage (VGS=0V
Gate-Source Voltage (VDS=0V)
Continuous Drain Current at Tc=25°C
Continuous Drain Current at Tc=100°C
Pulsed drain current (Note 1)
Maximum Power Dissipation(Tc=25)
Derate above 25°C
Single pulse avalanche energy (Note2)
Avalanche current(Note 1)
Repetitive Avalanche energy tAR limited by Tjmax
(Note 1)
VDS
VGS
ID (DC)
ID (DC)
IDM (pluse)
PD
EAS
IAR
EAR
NCE60R360D
NCE60R360F
NCE60R360
600
±30
11 11*
7 7*
33 33*
121 32.7
0.97 0.26
280
5.5
0.5
Unit
V
V
A
A
A
W
W/°C
mJ
A
mJ
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
http://www.ncepower.com
v1.0

1 page




NCE60R360 pdf
NCE60R360D,NCE60R360,NCE60R360F
Figure13. Transient Thermal Impedance for TO-220F
Wuxi NCE Power Semiconductor Co., Ltd
Page 5
http://www.ncepower.com
v1.0

5 Page










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