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PDF NCE1507I Data sheet ( Hoja de datos )

Número de pieza NCE1507I
Descripción N-Channel Enhancement Mode Power MOSFET
Fabricantes NCE Power Semiconductor 
Logotipo NCE Power Semiconductor Logotipo



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No Preview Available ! NCE1507I Hoja de datos, Descripción, Manual

http://www.ncepower.com
Pb Free Product
NCE1507I
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE1507I uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
VDS = 150V,ID = 7A
RDS(ON) < 290m@ VGS=10V (Typ:255m)
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Excellent package for good heat dissipation
Application
Power switching application
Hard switched and high frequency circuits
D
G
S
Schematic diagram
Marking and pin assignment
TO-251 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE1507I
NCE1507I
TO-251
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Pulsed (Note 1)
ID
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
150
±20
7
50
30
-55 To 175
Unit
V
V
A
A
W
Thermal Characteristic
Thermal Resistance,Junction-to-Case (Note 2)
RθJC
5 /W
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
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NCE1507I pdf
http://www.ncepower.com
NCE1507I
Pb-Free Product
Vds Drain-Source Voltage (V)
Figure 7 Capacitance vs Vds
TJ-Junction Temperature()
Figure 9 BVDSS vs Junction Temperature
Vds Drain-Source Voltage (V)
Figure 8 Safe Operation Area
TJ-Junction Temperature()
Figure 10 VGS(th) vs Junction Temperature
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
Wuxi NCE Power Semiconductor Co., Ltd
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