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Numéro de référence | NCE0260 | ||
Description | N-Channel Enhancement Mode Power MOSFET | ||
Fabricant | NCE Power Semiconductor | ||
Logo | |||
http://www.ncepower.com
Pb Free Product
NCE0260
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE0260 uses advanced trench technology and design to
provide excellent RDS(ON) with low gate charge. It can be
used in a wide variety of applications.
General Features
● VDS =200V,ID =60A
RDS(ON) <32mΩ @ VGS=10V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability
Schematic diagram
Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply
Marking and pin assignment
100% UIS TESTED!
100% ∆Vds TESTED!
TO-220-3L top view
Package Marking and Ordering Information
Device Marking Device Device Package
NCE0260
NCE0260
TO-220-3L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current
Maximum Power Dissipation
IDM
PD
Derating factor
Single pulse avalanche energy (Note 5)
EAS
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
200
±20
60
42
280
285
1.9
506
-55 To 175
Unit
V
V
A
A
A
W
W/℃
mJ
℃
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0
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Pages | Pages 7 | ||
Télécharger | [ NCE0260 ] |
No | Description détaillée | Fabricant |
NCE0260 | N-Channel Enhancement Mode Power MOSFET | NCE Power Semiconductor |
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