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NCE0205I fiches techniques PDF

NCE Power Semiconductor - N-Channel Enhancement Mode Power MOSFET

Numéro de référence NCE0205I
Description N-Channel Enhancement Mode Power MOSFET
Fabricant NCE Power Semiconductor 
Logo NCE Power Semiconductor 





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NCE0205I fiche technique
http://www.ncepower.com
Pb Free Product
NCE0205I
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE0205I uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
VDS =200V,ID =5A
RDS(ON) < 580m@ VGS=10V
Typ520m
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Low gate to drain charge to reduce switching losses
Schematic diagram
Application
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
Marking and pin assignment
100% Vds TESTED!
TO-251 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
0205
NCE0205I
TO-251
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
ID (100)
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
IDM
PD
TJ,TSTG
Limit
200
±20
5
3.5
20
50
-55 To 175
Unit
V
V
A
A
A
W
Wuxi NCE Power Semiconductor Co., Ltd
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