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IRF60R217 fiches techniques PDF

Infineon - IR MOSFET

Numéro de référence IRF60R217
Description IR MOSFET
Fabricant Infineon 
Logo Infineon 





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IRF60R217 fiche technique
IR MOSFET
StrongIRFET™
IRF60R217
Application
Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
 D
G
S
Benefits
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free, RoHS Compliant
G
Gate
VDSS
RDS(on) typ.
max
ID
60V
8.0m
9.9m
58A
D
Drain
D
S
G
D-Pak
IRF60R217
S
Source
Base part number Package Type
IRF60R217
D-Pak
Standard Pack
Form
Quantity
Tape and Reel
2000
Orderable Part Number
IRF60R217
30
ID = 35A
25
20
15 TJ = 125°C
10
5 TJ = 25°C
0
4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
1
60
50
40
30
20
10
0
25
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig 2. Maximum Drain Current vs. Case Temperature
2016-01-05

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