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Numéro de référence | IRF60B217 | ||
Description | IR MOSFET | ||
Fabricant | Infineon | ||
Logo | |||
1 Page
Application
Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
D
G
S
Benefits
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free*
RoHS Compliant, Halogen-Free
G
Gate
IR MOSFET
StrongIRFET™
IRHEFXF6E0TB® P2o1we7r MOSFET
VDSS
RDS(on) typ.
max
ID
60V
7.3m
9.0m
60A
S
D
G
TO-220AB
IRF60B217
D
Drain
S
Source
Base part number
IRF60B217
Package Type
TO-220
Standard Pack
Form
Quantity
Tube
50
Orderable Part Number
IRF60B217
30
ID = 36A
25
20
15 TJ = 125°C
10
5 TJ = 25°C
0
4 8 12 16
VGS, Gate-to-Source Voltage (V)
20
Fig 1. Typical On-Resistance vs. Gate Voltage
1
60
50
40
30
20
10
0
25
50 75 100 125 150
TC , CaseTemperature (°C)
175
Fig 2. Maximum Drain Current vs. Case Temperature
2016– 01-05
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Pages | Pages 10 | ||
Télécharger | [ IRF60B217 ] |
No | Description détaillée | Fabricant |
IRF60B217 | IR MOSFET | Infineon |
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