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GBJ2506 fiches techniques PDF

Thinki Semiconductor - 25.0 AMPERE GLASS PASSIVATED FLAT BRIDGE RECTIFIERS

Numéro de référence GBJ2506
Description 25.0 AMPERE GLASS PASSIVATED FLAT BRIDGE RECTIFIERS
Fabricant Thinki Semiconductor 
Logo Thinki Semiconductor 





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GBJ2506 fiche technique
GBJ25005 thru GBJ2510
®
Pb Free Plating Product
GBJ25005 thru GBJ2510
Pb
25.0 AMPERE GLASS PASSIVATED FLAT BRIDGE RECTIFIERS
Features
Glass passivated chip junction
Low forward voltage drop
High surge overload rating of 320 A peak
Ideal for printed circuit board
Mechanical Data
Case: Molded plastic,GBJ(5S/6KBJ)
Epoxy: UL 94V-0 rate flame retardant
Terminals: Leads solderable per JESD22-B102,
Meet JESD 201 class 2 whisker test
Mounting position: Any
GBJ
Dimensions in inches and (millimeters)
1.193(30.3)
1.169(29.7)
HOLE FOR NO.
6 SCREW
.189(4.8)
.173(4.4)
.106(2.7)
.096(2.3)
.094(2.4)
.078(2.0)
.043(1.1)
.035(0.9)
+
~~-
.119
(0.5) .800(20.3)
.697(17.7) .441(11.2)
.425(10.8)
.114(2.9)
.165(4.2) .708(18.0) .098(2.5)
.150(3.8) .669(17.0)
.402(1.1)
.386(0.9)
.303(7.7)
.287(7.3)
.303(7.7)
.287(7.3)
.150(3.8)
.134(3.4)
.184(3.4)
.122(3.1)
.031(0.8)
.023(0.6)
Absolute Maximum Ratings and Characteristics
Ratings at 25 OC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or
inductive load. For capacitive load, derate current by 20%.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
PARAMETER
SYMBOL GBJ25005 GBJ2501 GBJ2502 GBJ2504 GBJ2506 GBJ2508 GBJ2510 UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Rating for fusing (t<8.3ms)
Maximum instantaneous forward voltage (Note 1)
@ 12.5 A
@ 25 A
Maximum reverse current @ rated VR
Typical thermal resistance
Operating junction temperature range
Storage temperature range
TJ=25°C
TJ=125°C
VRRM
VRMS
VDC
IF(AV)
IFSM
I2t
VF
IR
RθJC
TJ
TSTG
50 100 200 400 600 800 1000 V
35 70 140 280 420 560 700 V
50 100 200 400 600 800 1000 V
25 A
320 A
508 A2s
1.0
1.1
10
500
0.6
- 55 to +150
- 55 to +150
V
μA
°C/W
°C
°C
Note 1: Pulse test with PW=300μs, 1% duty cycle
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
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http://www.thinkisemi.com/

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