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Numéro de référence | FY8BCH-02F | ||
Description | Nch POWER MOSF | ||
Fabricant | Mitsubishi | ||
Logo | |||
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FY8BCH-02F
MITMSIUTBSIUSBHIISNHcI hNPchOWPOEWREMROMSFOESTFET
FY8BCFYH8B-0CH2-F02F
HIGHHIG-SHP-ESEPDEESDWSITWCIHTICNHGINUGSEUSE
OUTLINE DRAWING
Dimensions in mm
q 2.5V DRIVE
q VDSS .................................................................................. 20V
q rDS (ON) (MAX) .............................................................. 16mΩ
q ID ........................................................................................... 8A
APPLICATION
Li - ion battery protection
3.0
1.1
0.275
0.65
SOURCE
GATE
DRAIN
TSSOP8
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
—
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
VGS = 0V
VDS = 0V
L = 10µH
Typical value
Conditions
Ratings
20
±10
8
56
8
1.5
6.0
1.6
–55 ~ +150
–55 ~ +150
0.035
Unit
V
V
A
A
A
A
A
W
°C
°C
g
Sep. 2000
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Pages | Pages 2 | ||
Télécharger | [ FY8BCH-02F ] |
No | Description détaillée | Fabricant |
FY8BCH-02F | Nch POWER MOSF | Mitsubishi |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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