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Numéro de référence | BAW56DW | ||
Description | DIODE | ||
Fabricant | WEJ | ||
Logo | |||
1 Page
RoHS
BAW56DW
BAW56DW SWITCHING DIODE
DFEATURES
TPower dissipation
.,LPD: 200 mW (Tamb=25℃)
Collector current
IF: 150 mA
OCollector-base voltage
VR: 75 V
COperating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
SOT-363
NICMAKING: KJC
TROELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
CParameter
EReverse breakdown voltage
LReverse voltage leakage current
EForward voltage
JJunction capacitance
WEReveres recovery time
Symbol
V(BR) R
IR
VF
Cj
trr
Test conditions
IR= 2.5µA
VR=75V
VR=20V
IF=1mA
IF=10mA
IF=50mA
IF=150mA
VR=0V, f=1MHz
IF=IR=10mA
Irr=0.1×IR
RL=100Ω
MIN MAX
75
2.5
0.025
715
855
1000
1250
2
4
UNIT
V
µA
mV
pF
nS
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Pages | Pages 2 | ||
Télécharger | [ BAW56DW ] |
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