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Número de pieza | 2SA1741 | |
Descripción | PNP SILICON EPITAXIAL TRANSISTOR | |
Fabricantes | Renesas | |
Logotipo | ||
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No Preview Available ! DATA SHEET
SILICON POWER TRANSISTOR
2SA1741
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
The 2SA1741 is a power transistor developed for high-speed
switching and features a high hFE at low VCE(sat). This transistor is
ideal for use as a driver in DC/DC converters and actuators.
In addition, a small resin-molded insulation type package
contributes to high-density mounting and reduction of mounting
cost.
FEATURES
• High hFE and low VCE(sat):
hFE ≥ 100 (VCE = −2 V, IC = −1 A)
VCE(sat) ≤ 0.3 V (IC = −3 A, IB = −0.15 A)
• Full-mold package that does not require an insulating board or
bushing when mounting.
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Collector to base voltage
VCBO
Collector to emitter voltage
VCEO
Emitter to base voltage
VEBO
Collector current (DC)
IC(DC)
Collector current (pulse)
IC(pulse)*
Base current (DC)
IB(DC)
Total power dissipation
PT (Tc = 25°C)
Total power dissipation
PT (Ta = 25°C)
Junction temperature
Tj
Storage temperature
Tstg
* PW ≤ 300 µs, duty cycle ≤ 50%
Ratings
−100
−60
−7.0
−5.0
−10
−2.5
25
2.0
150
−55 to +150
Unit
V
V
V
A
A
A
W
W
°C
°C
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
1. Base
2. Collector
3. Emitter
.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16125EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
1 page 2SA1741
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SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT
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Base current
waveform
Collector current
waveform
Data Sheet D16125EJ1V0DS
5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet 2SA1741.PDF ] |
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