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Gulf Semiconductor - ULTRAFAST EFFICIENT PLASTIC SILICON RECTIFIER

Numéro de référence UG2D
Description ULTRAFAST EFFICIENT PLASTIC SILICON RECTIFIER
Fabricant Gulf Semiconductor 
Logo Gulf Semiconductor 





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UG2D fiche technique
UG2A THRU UG2D
ULTRAFAST EFFICIENT
PLASTIC SILICON RECTIFIER
VOLTAGE50 TO 200V
CURRENT2.0A
FEATURE
Low power loss
High surge capability
Glass passivated chip junction
Ultra-fast recovery time for high efficiency
High temperature soldering guaranteed
250/10sec/0.375lead length at 5 lbs tension
DO-15/DO-204AC
MECHANICAL DATA
TerminalPlated axial leads solderable per
MIL-STD 202E, method 208C
CaseMolded with UL-94 Class V-0 recognized Flame
Retardant Epoxy
Polaritycolor band denotes cathode
Mounting positionany
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(single-phase, half -wave, 60HZ, resistive or inductive load rating at 25, unless otherwise stated)
SYMBOL UG2A UG2B UG2C UG2D units
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC blocking Voltage
Maximum Average Forward Rectified
Current 3/8lead length at Ta =75
Peak Forward Surge Current 8.3ms single
half sine-wave superimposed on rated load
Maximum Forward Voltage at Forward current
2.0A Peak
Maximum DC Reverse Current Ta =25
at rated DC blocking voltage Ta =120
Vrrm
50
100 150 200
V
Vrms 35 70 105 140 V
Vdc
50
100 150 200
V
If(av) 2.0 A
Ifsm 80.0 A
Vf
0.95
V
Ir
5.0
200.0
μA
μA
Maximum Reverse Recovery Time (Note 1)
Typical Junction Capacitance
(Note 2)
Typical Thermal Resistance
(Note 3)
Storage and Operating Junction Temperature
Trr
Cj
R(ja)
Tstg,Tj
15
15
45
-55 to +150
nS
pF
/W
Note
1. Reverse Recovery Condition If =0.5A, Ir =1.0A, Irr =0.25A
2. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc
3. Thermal Resistance from Junction to Ambient at 3/8lead length, P.C. Board Mounted
Rev.A4
www.gulfsemi.com

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