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KBP202G fiches techniques PDF

KD - SINGLE PHASE SILICON BRIDGE RECTIFIER

Numéro de référence KBP202G
Description SINGLE PHASE SILICON BRIDGE RECTIFIER
Fabricant KD 
Logo KD 





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KBP202G fiche technique
KBP2005G THRU KBP210G
SINGLE PHASE SILICON BRIDGE RECTIFIER
Reverse Voltage - 50 to 1000 Volts Forward Current - 2.0 Ampere
FEATURES
Ideal for printed circuit board
Surge overload rating: 60A peak
High case dielectric strength
High temperature soldering guaranteed:
260°C/10 seconds at 5lbs. (2.3kg) tension
MECHANICAL DATA
Case: UL-94 Class V-0 recognized Flame Retardant Epoxy
Terminals: Plated leads solderable per
MIL-STD 202, method 208
Mounting Position: Any
Weight: 1.70 g
Marking: Type Number
KBP
.460(11.68)
.420(10.6)
.035(0.9)
.028(0.7)
AC
.5 (12.7)
MIN
.160(4.1)
.140(3.6)
SPACING
.600(15.24)
.560(14.22)
.153(3.9)
.146(3.7)
.050(1.27)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Output Current at TA = 25oC
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC Method)
Maximum DC Forward Voltage Drop per Bridge
Element at 2.0A DC
Maximum Reverse Current at rated
DC Blocking Voltage per element
@TA = 25oC
@TA = 125oC
Operating and Storage Temperature Range
SYMBOL
VRRM
VRMS
VDC
IO
KBP2005G KBP201G KBP202G KBP204G KBP206G KBP208G KBP210G UNITS
50 100 200 400 600 800 1000 V
35 70 140 280 420 560 700 V
50 100 200 400 600 800 1000 V
2.0 A
IFSM
60 A
VF
IR
TJ,TSTG
1.1
10.0
500
-55 to + 150
V
μA
0C

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