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INA5008AH1 fiches techniques PDF

Isahaya Electronics - TRANSISTOR

Numéro de référence INA5008AH1
Description TRANSISTOR
Fabricant Isahaya Electronics 
Logo Isahaya Electronics 





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INA5008AH1 fiche technique
PRELIMINARY
Notice:This is not a final specification
Some parametric are subject to change.
FEATURE
・Low voltage VCE(sat) = -0.4V(MAX),Ic=-500mA
APPLICATION
Small type machine low frequency voltage amplify application,
Switching
OUTLINE DRAWING
6.60
5.34
<TRANSISTOR>
INA5008AH1
SILICON PNP EPITAXIAL TYPE
UNIT:mm
2.30
0.50
1 23
2.286
0.76
JEITA:SC-63
JEDEC:TO-252
0.127max
0.50
TERMINAL CONNECTOR
(1)BASE
(2)COLLECTOR
(3)EMITTER
MAXIMUM RATING(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector to Base voltage
Collector to Emitter voltage
Emitter to Base voltage
Collector current
PC Collector dissipation
Tj Junction temperature
Tstg Storage temperature
TEST CONDITIONS
-
-
-
DC
Ta=25℃
Tc=25℃
-
-
ELECTRICAL CHARACTERISTICS(Ta=25℃)
SYMBOL
PARAMETER
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
C to B break down voltage
C to E break down voltage
E to B break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
C to E saturation voltage
TEST CONDITIONS
I C=-50μA
I C=-1mA
I E=-50μA
VCB=-60V
VEB=-5V
VCE=-2V,I C=-200mA
I C=-500mA,I B=-50mA
RATING
-80
-80
-5
-1
1
10
+150
-55~+150
UNIT
V
V
V
A
W
W
LIMITS
MIN TYP MAX
-80 -
-
-80 -
-
-5 -
-
- - -1.0
- - -1.0
80 - 420
- - -0.4
UNIT
V
V
V
μA
μA
-
V
ISAHAYA ELECTRONICS CORPORATION

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