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PDF H5N5006LS Data sheet ( Hoja de datos )
| Número de pieza | H5N5006LS | |
| Descripción | Silicon N Channel MOS FET | |
| Fabricantes | Renesas | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de H5N5006LS (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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H5N5006LD, H5N5006LS, H5N5006LM
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1115-0100
(Previous: ADE-208-1549)
Rev.1.00
Apr 07, 2006
Features
• Low on-resistance
• Low leakage current
• High speed switching
• Low gate charge
• Avalanche ratings
Outline
RENESAS Package code: PRSS0004AE-A
(Package name: LDPAK (L) )
4
123
H5N5006LD
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK (S)-(1) )
4
123
1. Gate
2. Drain
3. Source
4. Drain
H5N5006LS
RENESAS Package code: PRSS0004AE-C
(Package name: LDPAK (S)-(2) )
4
D
G
123
H5N5006LM
S
Rev.1.00 Apr 07, 2006 page 1 of 7
1 page  
H5N5006LD, H5N5006LS, H5N5006LM
Reverse Drain Current vs.
Souece to Drain Voltage
5
4
Gate to Source Cutoff Voltage vs.
Case Temperature
5
ID = 10 mA
4
3
2
5 V, 10 V
1
VGS = 0
Pulse Test
0
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
3 1 mA
0.1 mA
2
1
0
–50 0
VDS = 10 V
50 100 150 200
Case Temperature Tc (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1 0.1
0.05
0.03
0.02
0.011shot pulse
0.01
10 µ 100 µ
θch – c (t) = γ s (t) • θch – c
θch – c = 2.5°C/W, Tc = 25°C
PDM
D=
PW
T
PW
T
1m
10 m
100 m
Pulse Width PW (S)
1
10
Switching Time Test Circuit
Vin Monitor
10 Ω
D.U.T.
Vout
Monitor
RL
Vin
10 V
VDD
= 250 V
Switching Time Waveform
Vin
Vout
10%
10%
td(on)
90%
tr
90%
90%
td(off)
10%
tf
Rev.1.00 Apr 07, 2006 page 5 of 7
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet H5N5006LS.PDF ] | |
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