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H5N5006FM fiches techniques PDF

Renesas - Silicon N Channel MOS FET

Numéro de référence H5N5006FM
Description Silicon N Channel MOS FET
Fabricant Renesas 
Logo Renesas 





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H5N5006FM fiche technique
H5N5006FM
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance: R DS (on) = 2.5 typ.
Low leakage current: IDSS = 1 µA max (at VDS = 500 V)
High speed switching: tf = 15 ns typ (at VGS = 10 V, VDD = 250 V, ID = 1.5 A)
Low gate charge: Qg = 14 nC typ (at VDD = 400 V, VGS = 10 V, ID = 3 A)
Avalanche ratings
Outline
RENESAS Package code: PRSS0003AD-A
(Package name: TO-220FM)
D
123
G
S
REJ03G1114-0200
(Previous: ADE-208-1112)
Rev.2.00
Sep 07, 2005
1. Gate
2. Drain
3. Source
Rev.2.00 Sep 07, 2005 page 1 of 6

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