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PDF H5N2509P Data sheet ( Hoja de datos )
| Número de pieza | H5N2509P | |
| Descripción | Silicon N Channel MOS FET | |
| Fabricantes | Renesas | |
| Logotipo |  |
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H5N2509P
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance: R DS (on) = 0.053 Ω typ.
• Low leakage current: IDSS = 1 µA max (at VDS = 250 V, VGS = 0 V)
• High speed switching: tf = 110 ns typ (at ID = 15 A, RL = 8.3 Ω, VGS = 10 V)
• Low gate charge: Qg = 110 nC typ (at VDD = 200 V, VGS = 10 V, ID = 30 A)
• Avalanche ratings
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
D
1
2
3
G
S
REJ03G1109-0200
(Previous: ADE-208-1378)
Rev.2.00
Sep 07, 2005
1. Gate
2. Drain (Flange)
3. Source
Rev.2.00 Sep 07, 2005 page 1 of 6
1 page  
H5N2509P
Reverse Drain Current vs.
Source to Drain Voltage
100
Pulse Test
80
VGS = 0 V
60
40
20 5 V 10 V
0
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
Gate to Source Cutoff Voltage
vs. Case Temperature
5
4
ID = 10 mA
3
1 mA
0.1 mA
2
1
VDS = 10 V
0
–50 0
50
100 150 200
Case Temperature Tc (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1 0.1
0.05
0.03
0.01
0.02
0.01
1shot
pulse
10 µ
100 µ
θch – c (t) = γ s (t) • θch – c
θch – c = 0.833°C/W, Tc = 25°C
PDM
D=
PW
T
PW
T
1m
10 m
100 m
Pulse Width PW (S)
1
10
Switching Time Test Circuit
Vin Monitor
10 Ω
Vin
10 V
D.U.T.
Vout
Monitor
RL
VDD
= 125 V
Waveform
Vin
Vout
10%
10%
90%
td(on)
tr
90%
90%
td(off)
10%
tf
Rev.2.00 Sep 07, 2005 page 5 of 6
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet H5N2509P.PDF ] | |
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