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Numéro de référence | BCX20LT1 | ||
Description | NPN TRANSISTOR | ||
Fabricant | WEJ | ||
Logo | |||
RoHS
BCX20LT1
NPN EPITAXIAL SILICON TRANSISTOR
GENERAL PURPOSE TRANSISTORS
ABSOLUTE MAXIMUM RATINGS at Ta=25
Characteristic
Symbol Rating
Unit
Collector-Base Voltage
Vcbo
30
V
Collector-Emitter Voltage
Vceo
25
V
Emitter-Base Voltage
Vebo
5.0
V
Collector Current
Ic 500
mA
Total Device Dissipation
FR-5 Board(1) Ta=25
PD 225
mw
Derate above 25
1.8 mW/
Total Device Dissipation
Alumina Substrate,(2) Ta=25
Derate above 25
Junction Temperature
ICStorage Temperature
PD 300
2.4
Tj 150
Tstg -55-150
mw
mW/
NELECTRICAL CHARACTERISTICS at Ta=25
Characteristic
Symbol Min Typ Max Unit
OCollector-Base Voltage
V(BR)ceo 25
V
Collector-Emitter Voltage
V(BR)ces 30
V
REmitter Cutoff Current
Iebo 10 uA
TCollector Cutoff Current
Icbo
ECDC Current Gain
LCollector-Emitter Saturation Voltage
HFE
Vce(sat)
100
70
40
100 nA
5.0 uA
600
620 mV
Base-Emitter Saturation Voltage
Vbe(on)
E* 1.Total Device Dissipation : FR=1X0.75X0.062in .
2.Alumina=0.4 X 0.3 X 0.024in.99.5% alumina
1.2
V
JDEVICE MARKING:
WEBCX20LT1=U2
CO.,LTD1.
2.4
1.3
1 . G AT E
2.SOURCER
3.DRAIE
Unit:mm
Test Conditions
Ic=10mA Ib=0
Ic=10uA Ic=0
Veb=5V Ic=0
Vcb=20V Ie=0
Vcb=20V Ie=0 TA=150
Vce=1.0V Ic=-100mA
Vce=1.0V Ic=-300mA
Vce=1.0V Ic=-500mA
Ic=-500mA Ib=-50mA
Vbe=1V Ic=500mA
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Pages | Pages 1 | ||
Télécharger | [ BCX20LT1 ] |
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