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Numéro de référence | BA282 | ||
Description | Band switching diode | ||
Fabricant | WEJ | ||
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1 Page
RoHS
BA282/BA283
Band switching diode TDFeatures
1. Low differential forward resistance
.,L2. Low diode capacitance
3. High reverse impedance
Applications
OBand switching in VHF-tuners
CConstruction
ICSilicon epitaxial planar
NAbsolute Maximum Ratings
Tj=25
OParameter
Reverse voltage
RForward current
TJunction temperature
Storage temperature range
Test Conditions
ECMaximum Thermal Resistance
Tj=25
LParameter
WEJ EJunction ambient
Test Conditions
I=4mm, TL=constant
Symbol
VR
IF
Tj
Tstg
Value
35
100
150
-55…+150
Unit
V
mA
Symbol
RthJA
Value
350
Unit
K/W
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Pages | Pages 2 | ||
Télécharger | [ BA282 ] |
No | Description détaillée | Fabricant |
BA282 | Silicon Planar Diodes | Vishay Telefunken |
BA282 | Band switching diode | WEJ |
BA283 | Silicon Planar Diodes | Vishay Telefunken |
BA283 | Band switching diode | WEJ |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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