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2SD596 Datasheet دیتاشیت PDF دانلود

دیتاشیت - WEJ - NPN EPITAXIAL SILICON TRANSISTOR

شماره قطعه 2SD596
شرح مفصل NPN EPITAXIAL SILICON TRANSISTOR
تولید کننده WEJ 
آرم WEJ 


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2SD596 شرح
RoHS
2SD596
2SD596 TRANSISTOR (NPN)
DFEATURES
TPower dissipation
.,LPCM:
0.2 W (Tamb=25)
Collector current
ICM: 0.7
OCollector-base voltage
A
V(BR)CBO:
30 V
COperating and storage junction temperature range
TJ, Tstg: -55to +150
SOT-23-3L
1. BASE
2. EMITTER
3. COLLECTOR
2. 80¡ À0. 05
1. 60¡ À0. 05
ICELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)
NParameter
Collector-base breakdown voltage
OCollector-emitter breakdown voltage
REmitter-base breakdown voltage
TCollector cut-off current
CEmitter cut-off current
EDC current gain
LCollector-emitter saturation voltage
EBase-emitter voltage
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)*
hFE(2)*
VCE(sat) *
VBE(on) *
Test conditions
Ic=100µA, IE=0
Ic= 1 mA, IB=0
IE= 100µA, IC=0
VCB=30 V , IE=0
VEB= 5V , IC=0
VCE= 1V, IC= 100mA
VCE=1V, IC= 700mA
IC=700 mA, IB= 70mA
VCE=6V, IC=10mA
MIN
30
25
5
110
50
0.6
TYP
JTransition frequency
fT
VCE= 6V, IC= 10mA
140
MAX UNIT
V
V
V
0.1 µA
0.1 µA
400
0.6 V
0.7 V
MHz
WE* Pulse test : Pulse width 350µs, Duty Cycle2%.
CLASSIFICATION OF hFE(1)
Marking
DV1
DV2
DV3
DV4
DV5
Range
110-180
135-220
170-270
200-320
250-400
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com

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