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2SD1781K Datasheet دیتاشیت PDF دانلود

دیتاشیت - WEJ - NPN EPITAXIAL SILICON TRANSISTOR

شماره قطعه 2SD1781K
شرح مفصل NPN EPITAXIAL SILICON TRANSISTOR
تولید کننده WEJ 
آرم WEJ 


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2SD1781K شرح
RoHS
2SD1781K
SOT-23-3L
2SD1781K TRANSISTOR (NPN)
DFEATURES
Power dissipation
TPCM:
.,LCollector current
200 mW (Tamb=25)
ICM
0.8 A
OCollector-base voltage
V(BR)CBO:
40 V
COperating and storage junction temperature range
TJ Tstg: -55to +150
1. BASE
2. EMITTER
3. COLLECTOR
2. 80¡ À0. 05
1. 60¡ À0. 05
ICELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)
NParameter
Collector-base breakdown voltage
OCollector-emitter breakdown voltage
REmitter-base breakdown voltage
TCollector cut-off current
Emitter cut-off current
CDC current gain
ECollector-emitter saturation voltage
LTransition frequency
ECollector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
VCE(sat)
fT
Cob
Test conditions
Ic=50µA, IE=0
Ic=1mA, IB=0
IE=50µA, IC=0
VCB=20V, IE=0
VEB=4V, IC=0
VCE=3V, IC=100mA
IC=500mA, IB=50mA
VCE=5V, IC=50mA, f=100MHz
VCB=10V, IE=0, f=1MHz
MIN TYP MAX UNIT
40 V
32 V
5V
0.5 µA
0.5 µA
120 390
0.4 V
150 MHz
10 pF
JCLASSIFICATION OF hFE(1)
ERank
WRange
Q
120-270
R
180-390
Marking
AFQ
AFR
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com

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