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2SD1766 Datasheet دیتاشیت PDF دانلود

دیتاشیت - WEJ - NPN EPITAXIAL SILICON TRANSISTOR

شماره قطعه 2SD1766
شرح مفصل NPN EPITAXIAL SILICON TRANSISTOR
تولید کننده WEJ 
آرم WEJ 


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2SD1766 شرح
RoHS
2SD1766
2SD1766 TRANSISTOR (NPN)
DFEATURES
Power dissipation
TPCM:
0.5 W (Tamb=25)
.,LCollector current
ICM: 2
Collector-base voltage
A
OV(BR)CBO:
40 V
Operating and storage junction temperature range
CTJ, Tstg: -55to +150
SOT-89
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
ICELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)
Parameter
NCollector-base breakdown voltage
Collector-emitter breakdown voltage
OEmitter-base breakdown voltage
RCollector cut-off current
TEmitter cut-off current
CDC current gain
Collector-emitter saturation voltage
ETransition frequency
LCollector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
VCE(sat)
fT
Cob
Test conditions
Ic=50µA, IE=0
Ic=1mA, IB=0
IE=50µA, IC=0
VCB=20V, IE=0
VEB=4V, IC=0
VCE=3V, IC=500mA
IC=2A, IB=0.2A
VCE=5V, IC=50mA, f=100MHz
VCB=10V, IE=0, f=1MHz
MIN TYP MAX UNIT
40 V
32 V
5V
1 µA
1 µA
82 390
0.8 V
100 MHz
30 pF
ECLASSIFICATION OF hFE(1)
JRank
ERange
WMarking
P
82-180
DBP
Q
120-270
DBQ
R
180-390
DBR
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com

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