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2SC4738 Datasheet دیتاشیت PDF دانلود

دیتاشیت - WEJ - NPN EPITAXIAL SILICON TRANSISTOR

شماره قطعه 2SC4738
شرح مفصل NPN EPITAXIAL SILICON TRANSISTOR
تولید کننده WEJ 
آرم WEJ 


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2SC4738 شرح
RoHS
2SC4738
2SC4738 TRANSISTOR (NPN)
DFEATURES
Power dissipation
TPCM:
0.1 W (Tamb=25)
.,LCollector current
ICM: 0.15
Collector-base voltage
A
OV(BR)CBO:
60 V
Operating and storage junction temperature range
CTJ, Tstg: -55to +150
SOT-523
1. BASE
2. EMITTER
3. COLLECTOR
ICELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)
Parameter
NCollector-base breakdown voltage
Collector-emitter breakdown voltage
OEmitter-base breakdown voltage
RCollector cut-off current
TEmitter cut-off current
CDC current gain
ECollector-emitter saturation voltage
Transition frequency
LCollector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
VCE(sat)
fT
Cob
Test conditions
Ic=100µA, IE=0
Ic=1mA, IB=0
IE=100µA, IC=0
VCB=60V, IE=0
VEB=5V, IC=0
VCE=6V, IC=2mA
IC=100mA, IB=10mA
VCE=10V, IC=1mA
VCB=10V, IE=0, f=1MHz
MIN TYP MAX UNIT
60 V
50 V
5V
0.1 µA
0.1 µA
120 700
0.25 V
80 MHz
3.5 pF
J ECLASSIFICATION OF hFE(1)
Rank
ERange
WMarking
Y
120-240
LY
GR
200-400
LG
BL
350-700
LL
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com

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