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2SC4617 Datasheet دیتاشیت PDF دانلود

دیتاشیت - WEJ - NPN EPITAXIAL SILICON TRANSISTOR

شماره قطعه 2SC4617
شرح مفصل NPN EPITAXIAL SILICON TRANSISTOR
تولید کننده WEJ 
آرم WEJ 


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2SC4617 شرح
RoHS
2SC4617
2SC4617 TRANSISTORNPN
DFEATURES
Power dissipation
TPCM : 0.15 WTamb=25℃)
.,LCollector current
ICM : 0.15 A
Collector-base voltage
V(BR)CBO : 60
V
OOperating and storage junction temperature range
TJTstg: -55to +150
SOT-523
1. BASE
2. EMITTER
3. COLLECTOR
CELECTRICAL CHARACTERISTICSTamb=25unless otherwise specified
ICParameter
Symbol Test conditions
MIN TYP
Collector-base breakdown voltage
V(BR)CBO Ic=50μA,IE=0
60
NCollector-emitter breakdown voltage
V(BR)CEO Ic=1mA,IB=0
50
Emitter-base breakdown voltage
V(BR)EBO IE=50μA,IC=0
7
OCollector cut-off current
ICBO VCB=60V,IE=0
REmitter cut-off current
IEBO VEB=7V,IC=0
TDC current gain
hFE(1) VCE=6V,IC=1mA
120
Collector-emitter saturation voltage
VCE(sat) IC=50mA,IB=5mA
CTransition frequency
fT VCE=12V,IC=2mA,f=100MHz
180
ECollector output capacitance
Cob VCB=12V,IE=0,f=1MHz
MAX UNIT
V
V
V
0.1 μA
0.1 μA
560
0.4 V
MHz
3.5 pF
ELCLASSIFICATION OF hFE(1)
Rank
JRange
WEMarking
Q
120-270
BQ
R
180-390
BR
S
270-560
BS
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com

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