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PDF 2SC4177 Data sheet ( Hoja de datos )
| Número de pieza | 2SC4177 | |
| Descripción | NPN EPITAXIAL SILICON TRANSISTOR | |
| Fabricantes | WEJ | |
| Logotipo |  |
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2SC4177
2SC4177 DFEATURES
TRANSISTOR (NPN )
TPower dissipation
.,LPCM:
0.15 W (Tamb=25℃)
Collector current
OICM: 0.1 A
Collector-base voltage
CV(BR)CBO: 60
V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
SOT-323
1. BASE
2. EMITTER
3. COLLECTOR
1. 25¡ À0. 05
2. 30¡ À0. 05
Unit: mm
ICELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
NParameter
OCollector-base breakdown voltage
Collector-emitter breakdown voltage
REmitter-base breakdown voltage
TCollector cut-off current
CEmitter cut-off current
EDC current gain
LCollector-emitter saturation voltage
EBase-emitter saturation voltage
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
Test conditions
Ic=100µA , IE=0
IC= 1mA , IB=0
IE=100µA, IC=0
VCB=60V , IE=0
VEB=5V , IC=0
VCE=6.0 V, IC= 1mA
IC=100 mA, IB=10mA
IC= 100mA, IB=10mA
MIN
60
50
5.0
90
Transition frequency
EJOutput Capacitance
fT
VCE= 6.0V, IE= -10mA
250
VCB=6.0V, IE= 0
Cob f=1.0MHz
MAX
0.1
0.1
600
0.3
1.0
3.0
UNIT
V
V
V
µA
µA
V
V
MHz
pF
WCLASSIFICATION OF hFE
Marking
L4
L5
L6
L7
Range
90-180
135-270
200-400
300-600
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 2SC4177.PDF ] | |
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