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2SC3838K Datasheet دیتاشیت PDF دانلود

دیتاشیت - WEJ - NPN EPITAXIAL SILICON TRANSISTOR

شماره قطعه 2SC3838K
شرح مفصل NPN EPITAXIAL SILICON TRANSISTOR
تولید کننده WEJ 
آرم WEJ 


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2SC3838K شرح
RoHS
2SC3838K
2SC3838K TRANSISTOR (NPN)
FEATURES
TDPower dissipation
.,LPCM:
0.15 W (Tamb=25)
Collector current
ICM: 0.05 A
Collector-base voltage
OV(BR)CBO:
20 V
Operating and storage junction temperature range
CTJ, Tstg: -55to +150
SOT-23-3L
1. BASE
2. EMITTER
3. COLLECTOR
2. 80¡ À0. 05
1. 60¡ À0. 05
ICELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)
Parameter
NCollector-base breakdown voltage
OCollector-emitter breakdown voltage
REmitter-base breakdown voltage
TCollector cut-off current
Emitter cut-off current
CDC current gain
ECollector-emitter saturation voltage
LTransition frequency
ENoise figure
Symbol
V (BR) CBO
V (BR) CEO
V (BR) EBO
ICBO
IEBO
hFE
VCE (sat)
fT
F
Test conditions
Ic=10µA, IE=0
Ic= 1mA, IB=0
IE= 10µA, IC=0
VCB= 10 V , IE=0
VEB= 2V , IC=0
VCE= 10V, IC= 5mA
IC=-10 mA, IB= 5mA
VCE=10V, IC= 10mA
f = 500MHz
VCE=6V, IC= 2mA
f = 500MHz
MIN
20
11
3
27
1.4
TYP
MAX
0.5
0.5
270
0.5
UNIT
V
V
V
µA
µA
V
GHz
4 dB
JCLASSIFICATION OF hFE
ERank
L
WRange
27-56
M
39-82
N
56-120
P
82-180
Q
120-270
Marking
AD
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com

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