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Numéro de référence | HCS65R660S | ||
Description | N-Channel Super Junction MOSFET | ||
Fabricant | SemiHow | ||
Logo | |||
HCS65R660S
650V N-Channel Super Junction MOSFET
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 14 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) ȍ7\S#9GS=10V
100% Avalanche Tested
November 2014
BVDSS = 650 V
RDS(on) typ ȍ
ID = 6.2 A
TO-220F
12
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
650
6.2 *
3.5 *
18 *
ρ20
120
2
1
15
PD
Power Dissipation (TC = 25)
- Derate above 25
29
0.23
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
-55 to +150
300
* Drain current limited by maximum junction temperature
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
Thermal Resistance Characteristics
Symbol
RșJC
RșJA
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
--
--
Max.
4.3
60.5
Units
/W
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͑͢͝ͿΠΧΖΞΓΖΣ͑ͣͥ͑͢͡
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Pages | Pages 7 | ||
Télécharger | [ HCS65R660S ] |
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