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Numéro de référence | HCU65R600S | ||
Description | 650V N-Channel Super Junction MOSFET | ||
Fabricant | SemiHow | ||
Logo | |||
June 2015
HCD65R600S / HCU65R600S
650V N-Channel Super Junction MOSFET
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 16 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) ȍ7\S#9GS=10V
100% Avalanche Tested
BVDSS = 650 V
RDS(on) typ = 0.54 ȍ
ID = 7.3 A
D-PAK I-PAK
2
1
1
32
3
HCD65R600S HCU65R600S
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
650
7.3
4.6
22
ρ20
150
2.0
0.5
15
Power Dissipation (TA = 25)*
PD Power Dissipation (TC = 25)
- Derate above 25
2.5
69
0.55
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/
Thermal Resistance Characteristics
Symbol
Parameter
RșJC
RșJA
Junction-to-Case
Junction-to-Ambient*
RșJA Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
1.8
50
110
Units
/W
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳͥ͑͝ͻΦΟΖ͑ͣͦ͑͢͡
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Pages | Pages 8 | ||
Télécharger | [ HCU65R600S ] |
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