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PDF G35160 Data sheet ( Hoja de datos )
| Número de pieza | G35160 | |
| Descripción | 35A HIGH VOLTAGE GLASS PASSIVATED CELL DIODE | |
| Fabricantes | Won-Top Electronics | |
| Logotipo |  |
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®
WON-TOP ELECTRONICS
Features
Glass Passivated Die Construction
Low Leakage
Low Forward Voltage
High Surge Current Capability
Die Size 160mil SQ
G35160
35A HIGH VOLTAGE GLASS PASSIVATED CELL DIODE
Pb
Anode +
C
D
Mechanical Data
Case: Cell Diode Passivated with Silicon Rubber
Terminal: Copper Disc with Ag Plated
Polarity: Indicated by Large Disc On Cathode Side
Mounting Position: Any
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 2
B
A
C35M
Dim Min Max
A — 6.40
B — 5.46
C 0.75 —
D — 2.50
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@TC = 125°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single Half Sine-Wave Superimposed on
Rated Load (JEDEC Method)
Forward Voltage
@IF = 35A
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
Typical Thermal Resistance Junction to Ambient
Operating and Storage Temperature Range
Symbol
VRRM
VRWM
VR
VR(RMS)
IO
IFSM
VFM
IRM
R JA
TJ, TSTG
Value
1600
1120
35
400
1.2
5.0
1.4
-40 to +150
Unit
V
V
A
A
V
µA
°C/W
°C
© Won-Top Electronics Co., Ltd.
Revision: April, 2012
www.wontop.com
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1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet G35160.PDF ] | |
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