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Número de pieza | DMN2400UFD | |
Descripción | N-CHANNEL ENHANCEMENT MODE MOSFET | |
Fabricantes | Diodes | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de DMN2400UFD (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! Product Summary
V(BR)DSS
20V
RDS(ON)
0.6Ω @ VGS = 4.5V
0.8Ω @ VGS = 2.5V
1.0Ω @ VGS = 1.8V
1.6Ω @ VGS = 1.5V
ID
TA = +25°C
0.9A
0.7A
0.5A
0.3A
Description and Applications
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Power Management Functions
Battery Operated Systems and Solid-State Relays
Load Switch
DMN2400UFD
N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
Low On-Resistance
Very low Gate Threshold Voltage, 1.0V Max
Low Input Capacitance
Fast Switching Speed
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: X1-DFN1212-3
Case Material: Molded Plastic; UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper Leadframe;
Solderable per MIL-STD-202, Method 208 e4
Terminal Connections: See Diagram
Weight: 0.005 grams (Approximate)
Drain
Gate
Body
Diode
ESD PROTECTED
Top View
Bottom View
Gate
Protection
Diode
Source
Equivalent Circuit
Pin-out Top view
Ordering Information (Note 4)
Notes:
Part Number
Case
Packaging
DMN2400UFD-7
X1-DFN1212-3
3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.
Marking Information
X1-DFN1212-3
K24
YM
K24 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
Date Code Key
Year
2011
Code
Y
2012
Z
Month Jan Feb
Code
1
2
DMN2400UFD
Document number: DS35475 Rev. 5 - 2
…
…
Mar
3
2015
C
Apr
4
2016
D
2017
E
2018
F
May
5
Jun
6
Jul Aug
78
1 of 6
www.diodes.com
2019
G
Sep
9
2020
H
Oct
O
2021
I
2022
J
Nov Dec
ND
February 2015
© Diodes Incorporated
1 page DMN2400UFD
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01 D = 0.01
D = 0.9
D = 0.005
D = Single Pulse
0.001
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (s)
Fig. 12 Transient Thermal Response
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
RJA(t) = r(t) * RJA
RJA = 261°C/W
P(pk)
t1
t2
TJ - TA = P * RJA(t)
Duty Cycle, D = t1/t2
10 100 1,000
A
A3
A1
D
e
b1
E (2x)
L
b
X1-DFN1212-3
Dim Min Max Typ
A 0.47 0.53 0.50
A1 0 0.05 0.02
A3 - - 0.13
b 0.27 0.37 0.32
b1 0.17 0.27 0.22
D 1.15 1.25 1.20
E 1.15 1.25 1.20
e - - 0.80
L 0.25 0.35 0.30
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Y2
DMN2400UFD
Document number: DS35475 Rev. 5 - 2
X
Y
X1
(2x)
Dimensions
C
X
X1
Y
Y1
Y2
Value (in mm)
0.80
0.42
0.32
0.50
0.50
1.50
Y1
(2x)
C
5 of 6
www.diodes.com
February 2015
© Diodes Incorporated
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet DMN2400UFD.PDF ] |
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DMN2400UFDQ | N-CHANNEL ENHANCEMENT MODE MOSFET | Diodes |
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