|
|
PDF DMN2300U Data sheet ( Hoja de datos )
| Número de pieza | DMN2300U | |
| Descripción | N-CHANNEL ENHANCEMENT MODE MOSFET | |
| Fabricantes | Diodes | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de DMN2300U (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
|
No Preview Available !
A Product Line of
Diodes Incorporated
DMN2300U
20V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23
Product Summary
V(BR)DSS
20V
RDS(on)
175mΩ @ VGS = 4.5V
240mΩ @ VGS = 2.5V
360mΩ @ VGS = 1.8V
ID Max (Note 5)
1.40A @ TA = 25°C
1.20A @ TA = 25°C
1.0A @ TA = 25°C
Features and Benefits
• On resistance <200mΩ
• Low Gate Threshold Voltage
• Fast Switching Speed
• “Lead Free”, RoHS Compliant (Note 1)
• Halogen and Antimony Free. "Green" Device (Note 2)
• ESD Protected Gate 2kV
• Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
• Load switch
Mechanical Data
• Case: SOT23
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish – Matte Tin
• Weight: 0.08 grams (approximate)
SOT23
ESD PROTECTED TO 2kV
Top View
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Equivalent Circuit
D
GS
Top View
Ordering Information (Note 3)
Part Number
DMN2300U-7
Marking
N2U
Reel size (inches)
7
Notes:
1. No purposefully added lead
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Tape width (mm)
8
Quantity per reel
3000
Marking Information
N2U
N2U = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2011
Y
Jan Feb
12
2012
Z
Mar
3
2013
A
Apr May
45
2014
B
Jun Jul
67
2015
C
Aug
8
Sep
9
2016
D
Oct
O
2017
E
Nov Dec
ND
DMN2300U
Datasheet number: DS35309 Rev. 2 - 2
1 of 7
www.diodes.com
July 2011
© Diodes Incorporated
1 page  
1.2
1.0
0.8 ID = 1mA
0.6 ID = 250µA
0.4
0.2
0
-50 -25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 10 Gate Threshold Variation vs. Ambient Temperature
1,000
TA = 125°C
100
10
TA = 85°C
TA = 25°C
TA = -55°C
1
2
8
4 6 8 10 12 14 16 18
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 12 Typical Leakage Current
vs. Drain-Source Voltage
20
6 VDS = 15V
ID = 1A
4
A Product Line of
Diodes Incorporated
DMN2300U
2.0
1.6
1.2 TA = 25°C
0.8
0.4
0
0 0.2 0.4 0.6 0.8 1.0 1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 11 Diode Forward Voltage vs. Current
100,000
10,000
1,000
100
10
TA = 125°C
TA = 150°C
TA = 85°C
TA = 25°C
TA = -55°C
1
2 4 6 8 10 12
VGS, GATE-SOURCE VOLTAGE (V)
Fig.13 Leakage Current vs. Gate-Source Voltage
2
0
0 0.5 1 1.5 2 2.5
Qg, TOTAL GATE CHARGE (nC)
Fig. 14 Gate-Charge Characteristics
DMN2300U
Datasheet number: DS35309 Rev. 2 - 2
3
5 of 7
www.diodes.com
July 2011
© Diodes Incorporated
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet DMN2300U.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| DMN2300U | N-CHANNEL ENHANCEMENT MODE MOSFET | Diodes |
| DMN2300UFB | 20V N-CHANNEL ENHANCEMENT MODE MOSFET |  Diodes Incorporated |
| DMN2300UFB4 | 20V N-CHANNEL ENHANCEMENT MODE MOSFET | Diodes Incorporated |
| DMN2300UFD | 20V N-CHANNEL ENHANCEMENT MODE MOSFET | Diodes Incorporated |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |