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Número de pieza | DMN2300UFL4 | |
Descripción | DUAL N-CHANNEL ENHANCEMENT MODE MOSFET | |
Fabricantes | Diodes | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de DMN2300UFL4 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! DMN2300UFL4
20V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
20V
Max RDS(on)
195mΩ @ VGS = 4.5V
260mΩ @ VGS = 2.5V
380mΩ @ VGS = 1.8V
520mΩ @ VGS = 1.5V
ID max
TA = +25°C
(Note 6)
2.11A
1.83A
1.51A
1.29A
Features and Benefits
• Footprint of Just 1.3 mm2
• Ultra Low Profile Package - 0.4mm Profile
• On Resistance <200mΩ
• Low Gate Threshold Voltage
• Fast Switching Speed
• Ultra-Small Surface Mount Package
• ESD Protected Gate 2KV
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This MOSFET is designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
• Load switch
Mechanical Data
• Case: X2-DFN1310-6
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish – NiPdAu Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 e4
D1 D2
G1 G2
ESD PROTECTED TO 2kV
Gate
Protection
Diode
Gate
Protection
S1 Diode
Device Symbol
S2
Top View
Pin-Out
Ordering Information (Note 4)
Part Number
Marking
Reel size (inches)
Tape width (mm)
Quantity per reel
DMN2300UFL4-7
23N
7
8 3000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.
Marking Information
23N
23N = Product Type Marking Code
DMN2300UFL4
Datasheet Number: DS35946 Rev. 2 - 2
1 of 7
www.diodes.com
September 2014
© Diodes Incorporated
1 page 1,000
100
10
TA = 125°C
TA = 85°C
TA = 25°C
TA = -55°C
1
2
8
4 6 8 10 12 14 16 18
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 11 Typical Leakage Current
vs. Drain-Source Voltage
20
6 VDS = 15V
ID = 1A
4
2
0
0 0.5 1 1.5 2 2.5 3
Qg, TOTAL GATE CHARGE (nC)
Fig. 13 Gate-Charge Characteristics
DMN2300UFL4
100,000
10,000
1,000
100
10
TA = 125°C
TA = 150°C
TA = 85°C
TA = 25°C
TA = -55°C
1
2 4 6 8 10 12
VGS, GATE-SOURCE VOLTAGE (V)
Fig.12 Leakage Current vs. Gate-Source Voltage
DMN2300UFL4
Datasheet Number: DS35946 Rev. 2 - 2
5 of 7
www.diodes.com
September 2014
© Diodes Incorporated
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet DMN2300UFL4.PDF ] |
Número de pieza | Descripción | Fabricantes |
DMN2300UFL4 | DUAL N-CHANNEL ENHANCEMENT MODE MOSFET | Diodes |
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