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DMN2075UDW fiches techniques PDF

Diodes - N-CHANNEL ENHANCEMENT MODE MOSFET

Numéro de référence DMN2075UDW
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Fabricant Diodes 
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DMN2075UDW fiche technique
Product Summary
V(BR)DSS
20V
RDS(on) max
48mΩ @ VGS = 4.5V
59mΩ @ VGS = 2.5V
ID
TA = 25°C
2.8A
2.6A
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
DC-DC Converters
Power management functions
DMN2075UDW
N-CHANNEL ENHANCEMENT MODE MOSFET
Benefit and Features
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT363
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin annealed over Alloy42 leadframe.
Solderable per MIL-STD-202, Method 208
Terminals Connections: See Diagram Below
Weight: 0.006 grams (approximate)
SOT363
D DS
Top View
D DG
Top View
Internal Schematic
Ordering Information (Note 3)
Notes:
Part Number
DMN2075UDW-7
Case
SOT363
1. No purposefully added lead.
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com
3. For packaging details, go to our website at http://www.diodes.com
Marking Information
Packaging
3000/Tape & Reel
G22
G22 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2011
Y
Jan Feb
12
2012
Z
Mar
3
2013
A
Apr May
45
2014
B
Jun Jul
67
2015
C
Aug
8
Sep
9
2016
D
Oct
O
2017
E
Nov Dec
ND
DMN2075UDW
Document number: DS35542 Rev. 1 - 2
1 of 6
www.diodes.com
September 2011
© Diodes Incorporated

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