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PDF DMN2023UCB4 Data sheet ( Hoja de datos )
| Número de pieza | DMN2023UCB4 | |
| Descripción | N-CHANNEL ENHANCEMENT MODE MOSFET | |
| Fabricantes | Diodes | |
| Logotipo |  |
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DMN2023UCB4
N-CHANNEL ENHANCEMENT MODE FIELD MOSFET
Product Summary
V(BR)DSS
RSS(ON)
24V 26mΩ @ VGS = 4.5V
Package
X1-WLB1818-4
IS
TA = +25°C
6.0A
Description
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)) with thin WLCSP packaging process and yet
maintain superior switching performance, making it ideal for high
efficiency power management applications.
Applications
Battery Management
Load Switch
Battery Protection
X1-WLB1818-4
Features
Built-in G-S Protection Diode Against ESD 2kV HBM
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: X1-WLB1818-4
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
G1 G2
ESD PROTECTED TO 2kV
Top View
N-Channel S1
N-Channel S2
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
DMN2023UCB4-7
Case
X1-WLB1818-4
Packaging
3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
X1-WLB1818-4
8W = Product Type Marking Code
8W YM = Date Code Marking
YM Y or Y = Year (ex: Y = 2011)
M or M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2011
Y
Jan Feb
12
2012
Z
Mar
3
2013
A
Apr May
45
2014
B
Jun Jul
67
2015
C
Aug
8
Sep
9
2016
D
Oct
O
2017
E
Nov Dec
ND
DMN2023UCB4
Document number: DS35829 Rev. 10 - 2
1 of 8
www.diodes.com
March 2015
© Diodes Incorporated
1 page  
100
R DS(on)
Limited
10
PW = 10µs
DC
1 PW = 10s
PW = 1s
PW = 100ms
0.1 TJ(m ax) = 150°C
TA = 25°C
VGS = 4.5V
Single Pulse
PW = 10ms
PW = 1ms
PW = 100µs
DUT on 1 * MRP Board
0.01
0.01 0.1
1 10
VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 13 SOA, Safe Operation Area
100
Test Circuits
DMN2023UCB4
TEST CIRCUIT 1 ISSS
TEST CIRCUIT 2 IGSS
When FET1 is measured, between GATE and
SOURCE of FET2 are shorted.
TEST CIRCUIT 3 VGS(off)
When FET1 is measured, between GATE and
SOURCE of FET2 are shorted.
TEST CIRCUIT 4 |yfs|
ΔIS/ΔVGS
DMN2023UCB4
Document number: DS35829 Rev. 10 - 2
5 of 8
www.diodes.com
March 2015
© Diodes Incorporated
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet DMN2023UCB4.PDF ] | |
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