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Numéro de référence | CBR10-010P | ||
Description | SILICON BRIDGE RECTIFIERS | ||
Fabricant | Central Semiconductor | ||
Logo | |||
CBR10-010P SERIES
SILICON BRIDGE RECTIFIERS
10 AMP, 100 THRU 1000 VOLT
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CBR10-010P series
devices are silicon, single phase, full wave bridge rectifiers
designed for general purpose applications. The molded
epoxy case has a built-in metal baseplate for heat sink
mounting. The device utilizes standard 0.25” FASTON
terminals.
CASE FP
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL -010P
Peak Repetitive Reverse Voltage
VRRM 100
DC Blocking Voltage
VR 100
RMS Reverse Voltage
VR(RMS) 70
Average Forward Current (TC=60°C)
IO
Peak Forward Surge Current
IFSM
I2t Rating for Fusing (1ms<t<8.3ms)
I2t
-020P
200
200
140
RMS Isolation Voltage (case to lead)
Operating and Storage
Junction Temperature
Thermal Resistance
Viso
TJ, Tstg
ΘJC
CBR10
-040P -060P
400 600
400 600
280 420
10
200
160
2500
-65 to +150
1.9
-080P
800
800
560
-100P
1000
1000
700
UNITS
V
V
V
A
A
A2s
Vac
°C
°C/W
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
TYP MAX
IR VR=Rated VRRM
10
IR VR=Rated VRRM, TA=125°C
500
VF IF=5.0A
1.2
CJ VR=4.0V, f=1.0MHz
300
UNITS
μA
μA
V
pF
R3 (24-June 2013)
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Pages | Pages 2 | ||
Télécharger | [ CBR10-010P ] |
No | Description détaillée | Fabricant |
CBR10-010 | Diode ( Rectifier ) | American Microsemiconductor |
CBR10-010P | SILICON BRIDGE RECTIFIERS | Central Semiconductor |
CBR10-010P | Diode ( Rectifier ) | American Microsemiconductor |
CBR10-010PW | Diode ( Rectifier ) | American Microsemiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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