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Numéro de référence | CBR1-L100M | ||
Description | SILICON BRIDGE RECTIFIERS | ||
Fabricant | Central Semiconductor | ||
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CBR1-L010M SERIES
SILICON BRIDGE RECTIFIERS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CBR1-L010M series
types are silicon single phase, full wave bridge rectifiers
designed for general purpose applications.
MARKING: FULL PART NUMBER
CASE B-M
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
CBR1
SYMBOL -L010M -L020M -L040M -L060M -L080M -L100M UNITS
Peak Repetitive Reverse Voltage
VRRM 100 200 400 600 800 1000 V
DC Blocking Voltage
VR 100 200 400 600 800 1000 V
RMS Reverse Voltage
VR(RMS) 70
140 280 420
560 700
V
Average Forward Current (TA=50°C)
IO
1.5 A
Peak Forward Surge Current
IFSM
50
A
Operating and Storage
Junction Temperature
TJ, Tstg
-65 to +150
°C
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN MAX
IR VR=Rated VRRM
10
IR VR=Rated VRRM, TA=125°C
500
VF IF=1.0A
1.0
UNITS
μA
μA
V
R1 (25-February 2013)
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Pages | Pages 2 | ||
Télécharger | [ CBR1-L100M ] |
No | Description détaillée | Fabricant |
CBR1-L100M | SILICON BRIDGE RECTIFIERS | Central Semiconductor |
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