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Fairchild Semiconductor - 3.0 Ampere Glass Passivated High Efficiency Rectifiers

Numéro de référence EGP30F
Description 3.0 Ampere Glass Passivated High Efficiency Rectifiers
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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EGP30F fiche technique
Discrete POWER & Signal
Technologies
EGP30A - EGP30K
Features
Glass passivated cavity-free junction.
1.0 min (25.4)
High surge current capability.
Low leakage current.
Superfast recovery time for high
efficiency.
Low forward voltage, high current
capability.
DO-201AD
COLOR BAND DENOTES CATHODE
0.375 (9.53)
0.285 (7.24)
0.210 (5.33)
0.190 (4.83)
0.052 (1.32)
0.048 (1.22)
Dimensions in inches (mm)
3.0 Ampere Glass Passivated High Efficiency Rectifiers
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
IO
if(surge)
PD
RθJA
RθJL
Tstg
TJ
Average Rectified Current
.375 " lead length @ TA = 55°C
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Storage Temperature Range
Operating Junction Temperature
3.0
125
6.25
50
20
8.5
-65 to +150
-65 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Units
A
A
W
mW /°C
°C/W
°C/W
°C
°C
Electrical Characteristics TA = 25°C unless otherwise noted
Parameter
Peak Repetitive Reverse Voltage
Maximum RMS Voltage
DC Reverse Voltage (Rated VR)
Maximum Reverse Current
@ rated VR
TA = 25°C
TA = 125°C
Maximum Reverse Recovery Time
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
Maximum Forward Voltage @ 3.0 A
Typical Junction Capacitance
VR = 4.0 V, f = 1.0 MHz
Device
30A 30B 30C 30D 30F 30G 30J 30K
50 100 150 200 300 400 600 800
35 70 105 140 210 280 420 560
50 100 150 200 300 400 600 800
5.0
100
50
0.95
95
1.25
75
75
1.7
Units
V
V
V
µA
µA
nS
V
pF
©1999 Fairchild Semiconductor Corporation
EGP30A - EGP30K, Rev. A

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