DataSheetWiki


EGP10MH fiches techniques PDF

Zowie - SINTERED GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER

Numéro de référence EGP10MH
Description SINTERED GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER
Fabricant Zowie 
Logo Zowie 





1 Page

No Preview Available !





EGP10MH fiche technique
EGP10AH THRU EGP10MH
SINTERED GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER
Reverse Voltage - 50 to 1000 Volts
Forward Current - 1.0 Ampere
PPAATTEENNTTEEDD DO-204AL
0.107(2.70)
0.080(2.00)
DIA.
0.034(0.86)
0.028(0.71)
DIA.
*Dimensions in inches and (millimeters)
TM
FEATURES
* Halogen-free type
* GPRC (Glass Passivated Rectifier Chip) inside
* Glass passivated cavity-free junction
* Compliance to RoHS product
* Low forward voltage, high current capability
* Low leakage current
* High surge current capability
* High temperature soldering guaranteed: 260oC/10 seconds,
0.375" (9.5mm) lead length, 5lbs. (2.3 kg) tension
* Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
MECHANICAL DATA
Case : JEDEC DO-204AL molded plastic over glass body
Terminals : Tin Plated, solderable per MIL-STD-750,
Method 2026
Polarity : Color band denotes cathode end
Weight : 0.012 ounes , 0.3 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature
unless otherwise specified.
EGP10
SYMBOLS
AH BH DH GH JH KH
Maximum repetitive peak reverse voltage
VRRM 50 100 200 400 600 800
Maximum RMS voltage
VRMS
35
70 140 280 420 560
Maximum DC blocking voltage
VDC
50 100 200 400 600 800
Maximum average forward rectified current
0.375" (9.5mm) lead length (SEE FIG.1)
I (AV)
1.0
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load (JEDEC Method)
IFSM
30
Maximum instantaneous forward voltage at 1.0 A
Maximum DC reverse current
at rated DC blocking voltage
TA=25oC
TA=125oC
TA=150oC
Maximum reverse recovery time (NOTE 1)
VF
IR
trr
1.0
5
30
50
50
1.25
1.7
5
50
-
75
Typical junction capacitance (NOTE 2)
CJ
15
Typical thermal resistance (NOTE 3)
R JA
50
Operating junction and storage temperature range
TJ,TSTG
NOTES : (1) Reverse recovery test condition : IF 0.5A, IR=1.0A, Irr=0.25A
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts
(3) Thermal resistance from junction to ambient at 0.375" (9.5mm) lead lengths, P.C.B. mounted.
-65 to +175
MH
1000
700
1000
UNITS
Volts
Volts
Volts
Amps
Amps
Volts
uA
nS
pF
oC / W
oC
REV. 0
Zowie Technology Corporation

PagesPages 2
Télécharger [ EGP10MH ]


Fiche technique recommandé

No Description détaillée Fabricant
EGP10M SINTERED GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER Zowie Technology
Zowie Technology
EGP10M Glass Passivated High Efficient Plastic Rectifiers Taiwan Semiconductor
Taiwan Semiconductor
EGP10MH SINTERED GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER Zowie
Zowie

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche