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Leshan Radio Company - Bias Resistor Transistor

Numéro de référence S-LDTC144TET1G
Description Bias Resistor Transistor
Fabricant Leshan Radio Company 
Logo Leshan Radio Company 





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S-LDTC144TET1G fiche technique
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
Applications
Inverter, Interface, Driver
LDTC144TET1G
S-LDTC144TET1G
Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
We declare that the material of product compliance with
RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
zAbsolute maximum ratings (Ta=25°C)
1
BASE
R1
Parameter
Symbol
Limits
Unit
SC-89
3
COLLECTOR
2
EMITTER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
Pc
Tj
Tstg
50
50
5
100
200
150
55 to +150
V
V
mA
mW
°C
°C
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTC144TET1G
S-LDTC144TET1G
LDTC144TET3G
S-LDTC144TET3G
H5
H5
47 -
47 -
3000/Tape & Reel
10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Collector-base breakdown voltage BVCBO 50
Collector-emitter breakdown voltage BVCEO 50
Emitter-base breakdown voltage
BVEBO 5
Collector cutoff current
ICBO
Emitter cutoff current
IEBO
Collector-emitter saturation voltage VCE(sat)
DC current transfer ratio
hFE 100
Input resistance
R1 32.9
Transition frequency
Characteristics of built-in transistor
fT ∗ −
Typ.
250
47
250
Max.
0.5
0.5
0.3
600
61.1
Unit
V
V
V
µA
µA
V
k
MHz
Conditions
IC=10µA
IC=2.0mA
IE=50µA
VCB=50V
VEB=4V
IC/IB=5mA/0.5mA
VCE=5V, IC=1mA
VCE=10V, IE= −5mA, f=100MHz
Rev.O 1/3

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