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HM62A16100LBPI-7 fiches techniques PDF

Renesas - 16M SRAM

Numéro de référence HM62A16100LBPI-7
Description 16M SRAM
Fabricant Renesas 
Logo Renesas 





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HM62A16100LBPI-7 fiche technique
HM62A16100I Series
Wide Temperature Range Version
16 M SRAM (1-Mword × 16-bit)
REJ03C0053-0001Z
Preliminary
Rev. 0.01
Jun.02.2003
Description
The Renesas HM62A16100I Series is 16-Mbit static RAM organized 1-Mword × 16-bit. HM62A16100I
Series has realized higher density, higher performance and low power consumption by employing CMOS
process technology (6-transistor memory cell). It offers low power standby power dissipation; therefore, it
is suitable for battery backup systems. It has the package variations of 48-bump chip size package with
0.75 mm bump pitch for high density surface mounting.
Features
Single 1.8 V supply: 1.65 V to 2.2 V
Fast access time: 70 ns (max)
Power dissipation:
Active: 3.6 mW/MHz (typ)
Standby: 0.9 µW (typ)
Completely static memory.
No clock or timing strobe required
Equal access and cycle times
Common data input and output.
Three state output
Battery backup operation.
2 chip selection for battery backup
Temperature range: 40 to +85°C
Preliminary: The specification of this device are subject to change without notice. Please contact your
nearest Renesas Technology’s Sales Dept. regarding specification.
Rev.0.01, Jun.02.2003, page 1 of 17

PagesPages 17
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