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DIM250PHM33-TL000 fiches techniques PDF

Dynex - Half Bridge IGBT Module

Numéro de référence DIM250PHM33-TL000
Description Half Bridge IGBT Module
Fabricant Dynex 
Logo Dynex 





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DIM250PHM33-TL000 fiche technique
DIM250PHM33-TL000
Half Bridge IGBT Module
DS6116-1 July 2013 (LN30665)
FEATURES
Low VCE(sat) Device
10µs Short Circuit Withstand
High Thermal Cycling Capability
High Current Density Enhanced DMOS SPT
Isolated AlSiC Base with AlN Substrates
KEY PARAMETERS
VCES
VCE(sat) * (typ)
IC (max)
IC(PK) (max)
3300V
2.0V
250A
500A
* Measured at the auxiliary terminals
APPLICATIONS
High Reliability Inverters
Motor Controllers
Traction Auxiliaries
Choppers
The Powerline range of high power modules includes
half bridge, chopper, dual, single and bi-directional
switch configurations covering voltages from 1200V to
6500V and currents up to 2400A.
The DIM250PHM33-TL000 is a Low VCE(sat) half bridge
3300V, soft punch through n-channel enhancement
mode, insulated gate bipolar transistor (IGBT)
chopper module configured with the lower arm of the
bridge controlled. The IGBT has a wide reverse bias
safe operating area (RBSOA). This device is
optimised for traction drives and other applications
requiring high thermal cycling capability.
The module incorporates an electrically isolated base
plate and low inductance construction enabling circuit
designers to optimise circuit layouts and utilise
grounded heat sinks for safety.
1(E1/C2)
2(C1)
5(E1)
4(G1)
8(C1)
3(E2)
7(E2)
6(G2)
Fig. 1 Circuit configuration
ORDERING INFORMATION
Order As:
DIM250PHM33-TL000
Note: When ordering, please use the complete part
number
Outline type code: P
(See Fig. 11 for further information)
Fig. 2 Package
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
www.dynexsemi.com
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