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VS-10BQ015PbF fiches techniques PDF

Vishay - Schottky Rectifier ( Diode )

Numéro de référence VS-10BQ015PbF
Description Schottky Rectifier ( Diode )
Fabricant Vishay 
Logo Vishay 





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VS-10BQ015PbF fiche technique
VS-10BQ015PbF
Vishay Semiconductors
Schottky Rectifier, 1.0 A
SMB
Cathode
Anode
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
IRM
TJ max.
Diode variation
EAS
SMB (DO-214AA)
1A
15 V
0.32 V
12 mA at 100 °C
125 °C
Single die
1 mJ
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
VRRM
Rectangular waveform
IFSM
tp = 5 μs sine
VF 1.0 Apk, TJ = 125 °C
TJ Range
FEATURES
• Ultralow forward voltage drop
• Optimized for OR-ing applications
• Guard ring for enhanced ruggedness and long
term reliability
• 125 °C TJ operation (VR < 5 V)
• High frequency operation
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for industrial level
DESCRIPTION
The VS-10BQ015PbF surface mount Schottky rectifier has
been designed for applications requiring low forward drop
and very small foot prints on PC boards. The proprietary
barrier technology allows for reliable operation up to 125 °C
junction temperature. Typical applications are in disk drives,
switching power supplies, converters, freewheeling diodes,
battery charging, and reverse battery protection.
VALUES
1.0
15
140
0.32
- 55 to 125
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
VS-10BQ015PbF
15
25
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
See fig. 5
IF(AV)
Maximum peak one cycle
non-repetitive surge current
See fig. 7
IFSM
Non-repetitive avalanche energy
EAS
Repetitive avalanche current
IAR
TEST CONDITIONS
50 % duty cycle at TL = 84 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
VRRM applied
TJ = 25 °C, IAS = 1 A, L = 2 mH
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
VALUES
1.0
140
40
1.0
1.0
UNITS
A
A
mJ
A
Document Number: 94110 For technical questions within your region, please contact one of the following:
Revision: 15-Nov-10
www.vishay.com
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